o top i g o back g i wbfbp-03b plastic-encapsulate transistors TSA114TNND03 transistor description pnp digital transistor features 1) built-in bias resistors enable the confi guration of an inverter circuit without connecting external input resistors (see equivalent circuit) 2) the bias resistors consis t of thin-film resistors with complete isolation to a llow positive biasing of the input. they also have the advantage of almost completely eliminating parasitic effects 3) only the on/off conditions need to be set for operation, making device design easy application pnp digital transistor for portable equipment:(i.e. m obile phone, mp3, md,cd-rom, dvd-rom , n ote book pc, etc.) marking: 94 o 94 i g maximum ratings ( t a =25 unless otherwise noted) symbol para m eter l imits units v cbo collector-base voltage -50 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -continuous -100 ma p c collector dissipation 150 mw t j junction temperature 150 t stg storage temperature -55~+150 electrical characteristics (ta=25 unless otherwise specified) parameter symbol test co n ditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c =-50 a,i e =0 -50 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-50 a,i c =0 -5 v collector cut-off current i cbo v cb =-50v,i e =0 -0.5 a emitter cut-off current i ebo v eb =-4v,i c =0 -0.5 a dc current gain h fe v ce =-5v,i c =-1ma 100 250 600 collector-emitter saturation voltage v ce(sat) i c =-10ma,i b =-1ma -0.3 v transition frequency f t v ce =-10v,i c =-5ma, f=100mhz 250 mhz imput resistor r 1 7 10 13 k ? wbfbp-03b (1.21.20.5) unit: mm 1. in 2. gnd 3. o ut 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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